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全球领先的非易失性铁电随机存取存储器 (F-RAM) 和集成半导体产品开发商及供应商Ramtron宣布扩大其应用于汽车设备+125C运行温度的铁电存储器产线--FM25L04-GA(容量:4KB,工作电压:3V, 带串行接口),其规格达到了AEC-Q100一级,能在汽车温度范围(-40C 至 +125C)下工作,而且在极端温度下仍能保留数据长达9,000小时。
先进传动系统的设计已经采用FM25L04-GA,利用铁电存储(F-RAM)迅速、频繁地记录数据,因此变速箱可以根据驾驶者的行为和路况不断地进行自我调整。F-RAM的无延迟写入、几乎无限的使用寿命以及高速SPI接口等特性,实现了以最大的总线速度进行非常可靠的数据写入,以应用于各方面先进的汽车应用。
Ramtron战略营销经理Duncan Bennett评论道:“Ramtron的铁电存储器F-RAM已经成为智能汽车应用-出租车和引擎方面的主流存储器技术;我们正在扩大一级汽车零部件产线,以适应世界各地汽车制造商新的要求。
关于FM25L04-GA
FM25L04-GA是一种4KB非易失性存储器,采用工业级标准的串行接口(SPI),加强了F-RAM的高速写入能力。此产品有着快速写入,无限次读/写以及低操作电流等特点,可以直接替代EEPROM。FM25L04-GA能以高达10MhHz的总线速度进行读写操作,并且具有先进的写入保护设计以防止意外的写操作和数据损坏。此产品工作电压为3伏特,可以在高达+125C温度下保留数据达9,000小时或在+55C的温度下保留数据达17年。FM25L04-GA现已供货,并采用绿色8引脚SOIC封装。
Put F-RAM memory to work in your next automotive system design
Ramtron supports demanding automotive system applications. We are committed to:
F-RAM is the iron-clad nonvolatile memory behind sophisticated sensor-based automotive electronics systems, selected by top safety and infotainment system designers worldwide:
AEC-Q100-Qualified
Select 64Kb, 16Kb, and 4Kb serial memory products have been Grade 1 and Grade 3 AEC-Q100-qualified, with more products in our automotive portfolio currently being qualified.
Under the Hood
The FM25L04-GA is now qualified to operate at +125 degrees Celsius and guaranteed to retain data for 9,000 hours at that extreme temperature. Additional Grade 1 F-RAM products are being qualified to serve an increasing array of under-the-hood automotive applications.
F-RAM: Superior nonvolatile memory for automotive data storage applications
The need for versatile nonvolatile memory in automotive applications is a growing phenomenon. Automotive electronic content has mushroomed with the widespread use of microcontrollers and sensors, which is driving the need for better data handling and storage in automotive sub-systems. F-RAM is a superior nonvolatile memory solution for these high-content automotive applications.
F-RAM Benefits
F-RAM has three major benefits over other nonvolatile memory choices: fast write speed, high write endurance and low power consumption.
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